Please use this identifier to cite or link to this item: http://103.99.128.19:8080/xmlui/handle/123456789/422
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dc.contributor.authorAkter, Nargis-
dc.contributor.authorSharmin, Sanjida-
dc.contributor.authorAfrose, Rahima-
dc.contributor.authorMatin, M.A.-
dc.contributor.authorAmin, N.-
dc.date.accessioned2024-05-30T04:52:07Z-
dc.date.available2024-05-30T04:52:07Z-
dc.date.issued2016-10-28-
dc.identifier.isbn978-984-34-1383-3-
dc.identifier.urihttp://103.99.128.19:8080/xmlui/handle/123456789/422-
dc.descriptionInternational Conference on Innovations in Science, Engineering and Technology 2016 (ICISET 2016) was a multidisciplinary international conference organized by the Faculty of Science and Engineering (FSE) of International Islamic University Chittagong (IIUC) in association with the Center for Research and Publication (CRP) of IIUC. The objective of ICISET 2016 was to create a unique opportunity for the scientists, engineers, professionals, researchers and students to present their latest research findings and experiences in the areas of Computer Engineering, Electrical Engineering, Electronics, Telecommunication Engineering, Pharmacy and other relevant areas of Science, Engineering and Technology. The conference took place on October 28-29, 2016 at the green premises of IIUC located at Kumira, Chittagong. Universiti Sains Islam Malaysia (USIM), a public university in Malaysia, was the International Partner of ICISET 2016. IEEE Bangladesh Section was the Technical Co-sponsor of the conference.en_US
dc.description.abstractThough the expenditure of world energy is increasing exponentially, it is obvious that a solution of renewable energy must be utilized. In order to fulfill the energy demand of the mankind, utilization of the huge energy of the sun by transforming it into electricity is an emerging alternative way. Recently developed InGaN is a direct band gap solar photovoltaic material that has an amazing tunable band gap of 0.7 eV to 3.4 eV and a high optical absorption coefficient over 105 /cm. In this paper, numerical simulations has been done using MATLab to explore the unknown potential of this promising material to design a high performance InGaN solar cell.All the required parameters for simulation were determined from the theory, literature and in some cases reasonable estimation. This simulation were done with different ratio of In and Ga content for the single junction solar cell and found a high conversion efficiency of 27.3% with this InGaN compound material.en_US
dc.description.sponsorshipIEEE and Faculty of Science and Engineering, IIUCen_US
dc.language.isoen_USen_US
dc.publisherIEEEen_US
dc.relation.ispartofseriesICISET;-
dc.subjectRenewable energyen_US
dc.subjectSolar photovoltaicen_US
dc.subjectInGaNen_US
dc.subjectMATLaben_US
dc.subjectConversion efficiencyen_US
dc.titleA Highly Efficient InGaN Single Junction Solar Cell Using MATLaben_US
dc.title.alternativeInternational Conference on Innovations in Science, Engineering and Technology (ICISET-2016)en_US
dc.title.alternativeICISET-2016en_US
dc.typeArticleen_US
Appears in Collections:proceedings in EEE

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