Abstract:
Different semiconductor materials are used to design
solar cell and among them, Gallium Arsenide (GaAs) has
currently more preferable causes it has several unique properties
such as flexibility, the wider and direct band gap of 1.42 eV, light
weighted with a low-temperature coefficient. The photon
absorption constant is higher in its so can easily trap the photons
more efficiently which in turns increases the efficiency of the
solar cell and its’ temperature coefficient is low and show better
performance at low light. Because of these properties, GaAs has
obtained a good position in thin film photovoltaic cell in the
market. Graphene is used as the window layer in GaAs solar cell
in research work that was simulated by using numerical analysis.
A structure of n-type Graphene with p-type GaAs absorber layer
is designed by lower volume of material which contains more
economic in present status. In this case Jsc, FF and Voc have
been observed with 15.17% conversion efficiency has been found
from the structure of Graphene with GaAs solar cell.
Additionally, the performance has been found for the proposed
model where increases the temperature decreases the normalized
efficiency and it is around -0.031%/°C.
