Abstract:
The CdS thin film is widely used for various
applications such as in solar cells, optoelectronic devices, LEDs,
photonics devices etc. The ultra-thin CdS layer is commonly used
as by layer or as window layer for CdTe, CIS, CIGS, CZTS thinfilm
solar cells. The CdS has high bandgap of 2.42 eV and
transparent after 510 nm wavelength. The excellent
optoelectronics properties of CdS material are very attractive as
hetero-junction partner (n-type) in thin-film solar cells. There are
several fabrication techniques used to deposit thin CdS layer such
as Screen Printing, Thermal Evaporation (TE), Molecular Beam
Epitaxy (MBE), Chemical Vapour Deposition (CVD), Pulsed
Laser Deposition (PLD), Sol-Gel, Spray Pyrolysis,
Electrochemical Deposition, Close Space Sublimation (CSS),
Sputtering, Chemical Bath Deposition (CBD) etc. Among them
TE is low cost, faster and the complete set-up is ready to be used
in the Lab. In this work, the CdS thin films were grown on
borosilicate glass substrate by thermal evaporation techniques
using VCM 600 V1 in a high vacuum condition at room
temperature. Around 200nm CdS thin film were fabricated on
BSG substrate and it took 35 minutes only. As grown CdS thin
film were characterized to evaluate its properties for the possible
application in CdS/CdTe thin-film solar cell. The as-deposited
CdS film characterization results showed lower resistivity with
higher mobility and carrier concentration which are good enough
to be used in thin-film solar cells, LEDs and photonic devices.
