Abstract:
Gallium Indium Phosphate (GaInP) is III-V semiconductor materials are widely used for the space application and promising material choices for the solar photovoltaic applications owing to its superior optoelectronic properties and very higher performance. The numerical analysis of the single junction GaInP solar cell was carried out by wx-AMPS software to evaluate the cell performance of the proposed cell. The maximum cell conversion efficiency was optimized by the variation of each layer thickness. This research work was done by two steps, firstly the influence the thickness of each layer was investigated for evaluate the cell performance of the single junction GaInP solar cell and secondly the influence of the ZnO layer was analysed by the with and without TCO layer. The possibility of single junction GaInP solar cells was examined and simulated results showed a significant improvement in the higher cell efficiency of 29.47% where Jsc is 24.57 (mA/cm2), Voc is 1.14 V and FF is 0.813 for single junction solar cell. Besides, it was shown a better thermal stability at the gradient of -0.03%/°C, where normalized efficiency of the single junction solar cell was linearly decreased with the increase of operating temperature.
