A Highly Efficient InGaN Single Junction Solar  Cell Using MATLab

Akter, Nargis; Sharmin, Sanjida; Afrose, Rahima; Matin, M.A.; Amin, N.

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dc.contributor.author	Akter, Nargis
dc.contributor.author	Sharmin, Sanjida
dc.contributor.author	Afrose, Rahima
dc.contributor.author	Matin, M.A.
dc.contributor.author	Amin, N.
dc.date.accessioned	2024-05-30T04:52:07Z
dc.date.available	2024-05-30T04:52:07Z
dc.date.issued	2016-10-28
dc.identifier.isbn	978-984-34-1383-3
dc.identifier.uri	http://103.99.128.19:8080/xmlui/handle/123456789/422
dc.description	International Conference on Innovations in Science, Engineering and Technology 2016 (ICISET 2016) was a multidisciplinary international conference organized by the Faculty of Science and Engineering (FSE) of International Islamic University Chittagong (IIUC) in association with the Center for Research and Publication (CRP) of IIUC. The objective of ICISET 2016 was to create a unique opportunity for the scientists, engineers, professionals, researchers and students to present their latest research findings and experiences in the areas of Computer Engineering, Electrical Engineering, Electronics, Telecommunication Engineering, Pharmacy and other relevant areas of Science, Engineering and Technology. The conference took place on October 28-29, 2016 at the green premises of IIUC located at Kumira, Chittagong. Universiti Sains Islam Malaysia (USIM), a public university in Malaysia, was the International Partner of ICISET 2016. IEEE Bangladesh Section was the Technical Co-sponsor of the conference.	en_US
dc.description.abstract	Though the expenditure of world energy is increasing exponentially, it is obvious that a solution of renewable energy must be utilized. In order to fulfill the energy demand of the mankind, utilization of the huge energy of the sun by transforming it into electricity is an emerging alternative way. Recently developed InGaN is a direct band gap solar photovoltaic material that has an amazing tunable band gap of 0.7 eV to 3.4 eV and a high optical absorption coefficient over 105 /cm. In this paper, numerical simulations has been done using MATLab to explore the unknown potential of this promising material to design a high performance InGaN solar cell.All the required parameters for simulation were determined from the theory, literature and in some cases reasonable estimation. This simulation were done with different ratio of In and Ga content for the single junction solar cell and found a high conversion efficiency of 27.3% with this InGaN compound material.	en_US
dc.description.sponsorship	IEEE and Faculty of Science and Engineering, IIUC	en_US
dc.language.iso	en_US	en_US
dc.publisher	IEEE	en_US
dc.relation.ispartofseries	ICISET;
dc.subject	Renewable energy	en_US
dc.subject	Solar photovoltaic	en_US
dc.subject	InGaN	en_US
dc.subject	MATLab	en_US
dc.subject	Conversion efficiency	en_US
dc.title	A Highly Efficient InGaN Single Junction Solar Cell Using MATLab	en_US
dc.title.alternative	International Conference on Innovations in Science, Engineering and Technology (ICISET-2016)	en_US
dc.title.alternative	ICISET-2016	en_US
dc.type	Article	en_US