Abstract:
The Cu2ZnSnS4 is a quaternary semiconductor compound has recently been drawn the attention of extensive research as a potential absorber layer since its offers favourable optical and electronic properties along with low cost material. In this research work, the deep level defects on the performance of CZTS solar cells with Bismuth Sulphide (Bi2S3) buffer layer was carried out by numerical analysis using SCAPS 2802 simulator. In the proposed cell, the CZTS absorber layer was reduced that minimized the cost, saving process time and energy required for fabrication. In this study, it was found that the feasibility of this proposed ultra thin CZTS solar cells and showed higher efficiency of 17.89% (Jsc = 31.05 mA/cm2, Voc = 1.03V and FF = 0.562). Moreover, the thermal stability of the CZTS solar cell was examined and found that the normalized efficiency of the proposed cell was linearly decreased with the increased of operating temperature at the gradient of -0.41%/0C.
Description:
The ICIEV provides vibrant opportunities for researchers, industry practitioners and students to share their research experiences, research results, ideas, review of various aspects and practical development experiences on Informatics, Electronics, Computer Vision and related fields. Through various presentations from peer-reviewed accepted papers, Special Talks and networking - the ICIEV provides the avenue to share knowledge, make networks, and develop a community for the new researchers - based on the experiences of experts. The ICIEV will open doors for challenging research areas for future. The ICIEV welcomes you to be part of it - through offering Special Session, Tutorial, Workshop, Special Talk, Panel Discussion, and through submitting your research paper on and related arenas!
