Design and performance analysis of a CMOS amplifier for Ultra-Wide Band wireless receivers using substrate integrated waveguide resonator.

Abstract

This research introduces a novel approach to the design of an ultra-wideband (UWB) low noise amplifier (LNA) by leveraging the substrate integrated waveguide (SIW) resonator. The proposed inductor less LNA operates in the frequency range of 67.5 GHz to 71.5 GHz, strategically aligning with the 180 nm technology transition frequency (fT). The distinct high-quality factor (Q) characteristic inherent in SIW resonators is harnessed to achieve a commendable gain (|𝑆��������|) at the designated operating frequencies. Central to the advancement of this LNA design is the seamless integration of SIW resonators, a departure from conventional approaches employing active spiral inductors. This departure marks a pioneering effort in the application of SIW in complementary metal-oxide-semiconductor (CMOS) LNA design, thereby eliminating the need for active spiral inductors and opening new avenues for enhanced performance. To further enhance the noise performance of the LNA, a sophisticated noise canceller circuit is introduced. This integrated common source and common gate topology, intricately blended with the original common gate configuration, significantly contributes to noise reduction. The judicious incorporation of the noise canceller circuit not only maintains an excellent input match (|𝑆��������| < − 14 dB) and output match (|𝑆��������| < − 15 dB) but also contributes to an average noise figure of 8.3 dB and a power gain of 9.76 dB at 69 GHz. The significance of this work extends beyond the mere introduction of an inductor-less SIW-based LNA. The utilization of SIW resonators brings forth a technological milestone in CMOS LNA design. By eliminating the active spiral inductor, the proposed LNA achieves a delicate balance between gain, noise performance, and frequency compatibility. This research represents a breakthrough, opening new avenues for the application of SIW in high-frequency electronics and advancing the frontiers of CMOS LNA design. In conclusion, this study not only presents a technologically innovative inductorless SIW-based UWB LNA but also underscores the potential of SIW resonators in revolutionizing the landscape of CMOS LNA design. The findings contribute to the ongoing discourse in high-frequency electronics and pave the way for further exploration and refinement in future research endeavors.